Semiconductor storage device

ABSTRACT

A semiconductor storage device includes word lines extending in first and second directions, and separated from each other in a third direction, sense amplifier circuits that partially overlap the word lines in the third direction, memory strings intersecting the word lines and extending in the third direction, memory-side bit lines extending in the first direction, separated from each other in the second direction, and including first and second adjacent memory-side bit lines, circuit-side bit lines between the word lines and the sense amplifier circuits and partially overlapping the respective memory-side bit lines in the third direction, and contact plugs extending in the third direction and respectively connecting the memory-side bit lines and the circuit-side bit lines. The contact plugs include first and second contract plugs that are electrically connected to the first and second memory-side bit lines, respectively, and are not aligned along the first or second direction.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.17/152,355, filed Jan. 19, 2021, which is a continuation of U.S. patentapplication Ser. No. 16/842,633, filed Apr. 7, 2020, now U.S. Pat. No.10,902,918, issued Jan. 26, 2021, which is a divisional of U.S. patentapplication Ser. No. 16/391,041 filed Apr. 22, 2019, now U.S. Pat. No.10,643,702, issued May 5, 2020, which is a continuation of U.S. patentapplication Ser. No. 16/022,568, filed Jun. 28, 2018, now U.S. Pat. No.10,276,241, issued Apr. 30, 2019, which is a continuation of U.S. patentapplication Ser. No. 15/583,609, filed May 1, 2017, now U.S. Pat. No.10,014,054, issued Jul. 3, 2018, which is a continuation of U.S. patentapplication Ser. No. 14/788,629, filed Jun. 30, 2015, now U.S. Pat. No.9,672,927, issued Jun. 6, 2017, which is a continuation of U.S. patentapplication Ser. No. 13/784,735, filed Mar. 4, 2013, now U.S. Pat. No.9,111,592, issued Aug. 18, 2015, which is based upon and claims thebenefit of priority from Japanese Patent Application No. 2012-144628,filed Jun. 27, 2012; the entire contents of which are incorporatedherein by reference.

FIELD

Embodiments described herein relate to semiconductor storage devices.

BACKGROUND

A NAND-type flash memory in which memory cells are three-dimensionallyarranged has been known.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing the semiconductor storage deviceaccording to a first embodiment.

FIG. 2 is a circuit diagram showing a memory cell array according to thefirst embodiment.

FIG. 3 is an oblique view showing the memory cell array according to thefirst embodiment.

FIG. 4 is a cross section showing the memory cell array according to thefirst embodiment.

FIG. 5 is a circuit diagram showing an NAND string according to thefirst embodiment.

FIG. 6 is a block diagram showing a row decoder and a driver circuitaccording to the first embodiment.

FIG. 7 is a circuit diagram showing a sense amplifier according to thefirst embodiment.

FIG. 8 is a timing chart showing various kinds of signals according tothe first embodiment.

FIG. 9 is a timing chart showing various kinds of signals according tothe first embodiment.

FIG. 10 is a planar layout of the semiconductor storage device accordingto the first embodiment.

FIG. 11 is a plan view showing the position relation between the memorycell array and peripheral circuits according to the first embodiment.

FIG. 12 is a cross section showing the memory cell array and theperipheral circuits according to the first embodiment.

FIG. 13 is a cross section showing the memory cell array and theperipheral circuits according to the first embodiment.

FIG. 14 is a plan view showing the position relation between the memorycell array and the peripheral circuits.

FIG. 15 is a plan view showing the position relation between a memorycell array and peripheral circuits according to a second embodiment.

FIG. 16 is a plan view showing the position relation between the memorycell array and the peripheral circuits according to the secondembodiment.

FIG. 17 is a plan view showing the memory cell array according to thesecond embodiment.

FIG. 18 is a plan view showing the position relation between a memorycell array and peripheral circuits according to a third embodiment.

FIG. 19 is a cross section showing the memory cell array and theperipheral circuits according to the third embodiment.

FIG. 20 is a schematic and a plan view showing sense amplifiersaccording to the third embodiment.

FIG. 21 is a cross section showing the memory cell array and the senseamplifiers according to the third embodiment.

FIG. 22 is a planar layout of the semiconductor storage device of amodified example of the first to third embodiments.

FIG. 23 is a planar layout of the semiconductor storage device of amodified example of the first to third embodiments.

FIG. 24 is a planar layout of the semiconductor storage device of amodified example of the first to third embodiments.

FIG. 25 is a circuit diagram showing a memory cell array of a modifiedexample of the first to third embodiments.

DETAILED DESCRIPTION

Embodiments of the present disclosure provide a semiconductor storagedevice that can improve the operation speed.

In general, according to one embodiment, the disclosure will beexplained with reference to the drawings. In the following explanation,common reference symbols are given to common parts of the drawings.

The semiconductor storage device as an embodiment of the presentdisclosure includes peripheral circuits, a memory cell array, upper bitlines extending in a first direction, and first and second connectingparts including several contact plugs for making electrical connectionsbetween the upper bit lines and the peripheral circuits. The peripheralcircuits are disposed on a semiconductor substrate. The memory cellarray is disposed above the peripheral circuits and the upper bit linesare disposed above the memory cell array. The memory cell array includesat least a first region and a second region each region includingseveral memory cells respectively laminated on an interlayer dielectric.The regions are sequentially arranged in a first direction. The upperbit lines are electrically connected with the memory cells. The firstand second connecting parts are provided with contact plugs respectivelyarranged in a second direction orthogonal to the first direction, andone of these connecting parts is installed between the first and secondregions. The upper bit lines include a first group of upper bit lines,which are connected to the peripheral circuits via the contact plugs ofthe first connecting part, and a second group of upper bit lines thatare connected to the peripheral circuits via the contact plugs of thesecond connecting part.

1. EMBODIMENT 1

The semiconductor storage device of a first embodiment will beexplained. In the following, a three-dimensional laminated NAND-typeflash memory in which memory cells are laminated on a semiconductorsubstrate will be mentioned and explained as the semiconductor storagedevice.

1.1 Constitution of Semiconductor Storage Device

First, the constitution of the semiconductor storage device of thisembodiment will be explained.

1.1.1 Entire Constitution of Semiconductor Storage Device

FIG. 1 is a block diagram showing the semiconductor storage device ofthis embodiment. As shown in the drawing, an NAND-type flash memory 1includes memory cell array 10, row decoders 11 (11-0 to 11-3), drivercircuit 12, sense amplifiers 13, data latch 14, data control circuit 15,input and output buffer 16, and input and output (input/output) padgroup 17.

The memory cell array 10 is provided with several (4 pieces in thisexample) blocks BLK (BLK0-BLK3) as a set of nonvolatile memory cells.Data in the same block BLK are collectively deleted. Each of the blocksBLK is provided with several (4 pieces in this example) memory groups GP(GPO-GP3) as a set of NAND strings 18 in which memory cells areconnected in series. Needless to say, the number of block in the memoryarray 10 and the number of memory group in the block BLK are arbitrary.

The row decoders 11-0 to 11-3 are respectively installed in accordancewith the blocks BLK0-BLK3. In addition, row addresses are decoded, andthe corresponding blocks BLK are selected.

The driver circuit 12 supplies a voltage required for write, readout,and deletion of data to the row decoders 11. This voltage is applied tothe memory cells by the row decoders 11.

When data are read out, the sense amplifier 13 senses and amplifies thedata read out of the memory cells. In addition, when data are written,the sense amplifier transfers the write data to the memory cells.

When data are read out, the data latch 14 temporarily holds the datasensed by the sense amplifier. In addition, when data are written, thedata latch temporarily holds the write data and transfers the write datato the sense amplifier 13.

The data control circuit 15 decodes a column address and connects thedata latch corresponding to the column address and the input and outputbuffer 16.

The input and output buffer 16 temporarily holds output data, which aretransferred from the data control circuit 15, or input data, which areinput via the input and output pad group 17 from the outside.

The input and output pad group 17 is provided with several input andoutput pads 19. These input and output pads 19 function as input andoutput terminals for delivery of data between the semiconductor storagedevice 1 and the outside.

1.1.2 Memory Cell Array 10

Next, the details of the constitution of the memory cell array 10 willbe explained. FIG. 2 is a circuit diagram showing the block BLK0. Theblocks BLK1-BLK3 also have a similar constitution.

As shown in the drawing, the block BLK0 includes four memory groups GP.In addition, each memory group GP includes n pieces (where n representsa natural number) of NAND strings 18.

Each of the NAND strings 18, for example, includes 8 pieces of memorycell transistors MT (MT0-MT7), selective transistors ST1 and ST2, and aback gate transistor BT. The memory cell transistor MT is provided witha control gate and a laminated gate including a charge storage layer andholds data in a nonvolatile manner. Here, the number of memory celltransistor MT may be 16 pieces, 32 pieces, 64 pieces, 128 pieces, etc.,and the number is not limited to 8. The back gate transistor BT is alsoprovided with a control gate and a laminated gate including a chargestorage layer similarly to the memory cell transistor MT. However, theback gate transistor BT does not hold data but functions as a simplecurrent path when data are written and deleted. The memory celltransistor MT and the back gate transistor BT are arranged so that itscurrent path is connected in series between the selective transistorsST1 and ST2. Here, the back gate transistor BT is installed between thememory cell transistors MT3 and MT4. The current path of the memory celltransistor MT7 at one end of this serial connection is connected to oneend of a current path of the selective transistor ST1, and the currentpath of the memory cell transistor MT0 at the other end is connected toone end of a current path of the selective transistor ST2.

The gate of the selective transistor ST1 of each of the memory groupsGPO-GP3 is respectively, commonly connected to selective gate linesSGS0-SGS3. The gate of the selective transistor ST1 is respectively,commonly connected to selective gate lines SGS0-SGS3. On the contrary,the control gates of the memory cell transistors MT0-MT7 in the sameblock BLK0 are respectively, commonly connected to word lines WL0-WL7,and the control gate of the back gate transistor BT is commonlyconnected to back gate lines BG (respectively BG0-BG3 in the blocksBLK0-BLK3).

In other words, the word lines WL0-WL7 and the back gate lines BG arecommonly connected among several memory groups GPO-GP3 in the same blockBLK0, whereas the selective gate lines SGD and SGS are independent ofeach memory group GPO-GP3, even in the same block BLK0.

In addition, of the NAND strings 18 arranged in a matrix form in thememory cell array 10, the other end of the current path of the selectivetransistor ST1 of the NAND strings 18 in the same row is commonlyconnected to any of bit lines BL (BL0-BLn, n represents a naturalnumber). In other words, the bit lines BL commonly connect the NANDstrings 18 among several blocks BLK. Moreover, the other end of thecurrent path of the selective transistor ST2 is commonly connected tothe source line SL. The source line SL, for example, commonly connectsthe NAND strings 18 among several blocks.

As mentioned above, data of the memory cell transistors MT in the sameblock BLK are collectively deleted. On the contrary, data arecollectively read out and written from and into several memory celltransistors MT commonly connected to any of the word lines WL in any ofthe memory groups GP of an of the blocks BLK. This unit is called a“page.”

Next, a three-dimensional laminated structure of the memory cell array10 will be explained with reference to FIGS. 3 and 4 . FIGS. 3 and 4 arean oblique view and a cross section showing the memory cell array 10.

As shown in the drawings, the memory cell array 10 is installed on asemiconductor substrate 20. In addition, the memory cell array 10 hasback gate transistor layer L1, memory cell transistor layer L2,selective transistor layer L3, and wiring layer L4 sequentially formedon the semiconductor substrate 20.

The back gate transistor layer L1 functions as the back gate transistorBT. The memory cell transistor layer L2 functions as the memory celltransistors MT0-MT7 (NAND strings 18). The selective transistor layer L3functions as the selective transistors ST1 and ST2. The wiring layer L4functions as the source line SL and the bit line BL.

The back gate transistor layer L1 has a back gate conductive layer 21.The back gate conductive layer 21 is formed so that it istwo-dimensionally extended in a first direction and a second directionparallel with the semiconductor substrate 20 (that is, the firstdirection and the second direction are orthogonal to a third directionin which the memory cells are laminated). The back gate conductive layer21 is divided for each block BLK. The back gate conductive layer 21, forexample, is formed of polycrystalline silicon. The back gate conductivelayer 21 functions as the back gate line BG.

In addition, the back gate conductive layer 21, as shown in FIG. 4 , hasa back gate hole 22. The back gate hole 22 is formed in the back gateconductive layer 21. The back gate hole 22 is formed in an approximatelyrectangular shape in which the first direction is the longitudinaldirection from the upper surface.

The memory cell transistor layer L2 is formed above the back gateconductive layer L1. The memory cell transistor layer L2 has word lineconductive layers 23 a-23 d. The word line conductive layers 23 a-23 dare laminated via an interlayer dielectric (not shown in the figure).The word line conductive layers 23 a-23 d are formed at a prescribedpitch in the first direction and in a stripe shape extending in thesecond direction. The word line conductive layers 23 a-23 d, forexample, are formed of polycrystalline silicon. The word line conductivelayer 23 a functions as a control gate (word lines WL3 and WL4) of thememory cell transistors MT3 and MT4, the word line conductive layer 23 bfunctions as a control gate (word lines WL2 and WL5) of the memory celltransistors MT2 and MT5, the word line conductive layer 23 c functionsas a control gate (word lines WL1 and WL6) of the memory celltransistors MT1 and MT6, and the word line conductive layer 23 dfunctions as a control gate (word lines WL0 and WL7) of the memory celltransistors MT0 and MT7.

In addition, the memory cell transistor layer L2, as shown in FIG. 4 ,has a memory hole 24. The memory hole 24 is formed so that it penetratesthrough the word line conductive layers 23 a-23 d. The memory hole 24 isformed so that it is matched with the end vicinity of the firstdirection of the back gate hole 22.

Moreover, the back gate transistor layer L1 and the memory celltransistor layer L2, as shown in FIG. 4 , has block insulating layer 25a, charge storage layer 25 b, tunnel insulating layer 25 c, andsemiconductor layer 26. The semiconductor layer 26 functions as a body(a back gate of each transistor) of the NAND strings 18.

The block insulating layer 25 a, as shown in FIG. 4 , is formed at aprescribed thickness at the sidewall facing the back gate hole 22 andthe memory hole 24. The charge storage layer 25 b is formed at aprescribed thickness on the side surface of the block insulating layer25 a. The tunnel insulating layer 25 c is formed at a prescribedthickness on the side surface of the charge storage layer 25 b. Thesemiconductor layer 26 is formed so that it contacts with the sidesurface of the tunnel insulating layer 25 c. The semiconductor layer 26is formed so that the back gate hole 22 and the memory hole 24 areembedded into it.

The semiconductor layer 26 is formed in a U shape from the seconddirection. In other words, the semiconductor layer 26 has a pair ofcolumnar parts 26 a extending in the direction perpendicular to thesurface of the semiconductor substrate 20 and a connecting part 26 b forconnecting the lower ends of a pair of columnar parts 26 a.

The block insulating layer 25 a and the tunnel insulating layer 25 c,for example, are formed of silicon oxide (SiO₂). The charge storagelayer 25 b, for example, is formed of silicon nitride (SiN). Thesemiconductor layer 26 is formed of polycrystalline silicon. These blockinsulating layer 25 a, charge storage layer 25 b, tunnel insulatinglayer 25 c, and semiconductor layer 26 forma MONOS type transistorfunctioning as the memory transistor MT.

In other words, in the constitution of the back gate transistor layerL1, the tunnel insulating layer 25 c is formed so that it encloses theconnecting part 26 b. The back gate conductive layer 21 is formed sothat it encloses the connecting part 26 b.

In addition, in the constitution of the memory transistor layer L2, thetunnel insulating layer 25 c is formed so that it encloses the columnarparts 26 a. The charge storage layer 25 b is formed so that it enclosesthe tunnel insulating layer 25 c. The block insulating layer 25 a isformed so that it encloses the charge storage layer 25 b. The word lineconductive layers 23 a-23 d are formed so that they enclose the blockinsulating layers 25 a-25 c and the columnar parts 26 a.

The selective transistor layer L3, as shown in FIGS. 3 and 4 , hasconductive layers 27 a and 27 b. The conductive layers 27 a and 27 b areformed in a stripe shape extending in the second direction so that theyhave a prescribed pitch in the first direction. A pair of conductivelayers 27 a and a pair of conductive layer 27 b are arranged in analternate fashion in the first direction. The conductive layers 27 a areformed in the upper layers of one columnar part 26 a, and the conductivelayers 27 b are formed in the upper layer of the other columnar part 26a.

The conductive layers 27 a and 27 b are formed of polycrystallinesilicon. The conductive layers 27 a function as the gate (selective gateline SGS) of the selective transistor ST2, and the conductive layers 27b function as the gate (selective gate line SGD) of the selectivetransistor ST1.

The selective transistor layer L3, as shown in FIG. 4 , has holes 28 aand 28 b. The holes 28 a and 28 b respectively penetrate through theconductive layers 27 a and 27 b. In addition, the holes 28 a and 28 bare respectively matched with the memory hole 24.

The selective transistor layer L3, as shown in FIG. 4 , is provided withgate insulating layers 29 a ad 29 b and semiconductor layers 30 a and 30b. The gate insulating layers 29 a and 29 b are respectively formed atthe sidewalls facing the holes 28 a and 28 b. The semiconductor layers30 a and 30 b are formed in a columnar shape extending in the directionperpendicular to the surface of the semiconductor substrate 20 so thatthey respectively contact with the gate insulating layers 29 a and 29 b.

The gate insulating layers 29 a and 29 b, for example, are formed ofsilicon oxide (SiO₂). The semiconductor layers 30 a and 30 b, forexample, are formed of polycrystalline silicon.

In other words, in the constitution of the selective transistor layerL3, the gate insulating layer 29 a is formed so that it encloses thecolumnar semiconductor layer 30 a. The conductive layer 27 a is formedso that it encloses the gate insulating layer 29 a and the semiconductorlayer 30 a. In addition, the gate insulating layer 29 b is formed sothat it encloses the columnar semiconductor layer 30 b. The conductivelayer 27 b is formed so that it encloses the gate insulating layer 29 band the semiconductor layer 30 b.

The wiring layer L4, as shown in FIGS. 3 and 4 , is formed in the upperlayer of the selective transistor layer L3. The wiring layer L4 hassource line layer 31, plug layers 32, and bit line layers 33.

The source line layer 31 is formed in a plate shape extending in thesecond direction. The source line layer 31 is formed so that it is incontact with the upper surfaces of a pair of semiconductor layers 27 ain the first direction. The plug layers 32 are formed so that they arein contact with the upper surfaces of the semiconductor layers 27 b andextend in the direction perpendicular to the surface of thesemiconductor substrate 20. The bit line layers 33 are formed at aprescribed pitch in the second direction and in a stripe shape extendingin the first direction. The bit line layers 33 are formed so that theyare in contact with the upper surfaces of the plug layers 32. The sourceline layer 31, plug layers 32, and bit line layers 33, for example, areformed of a metal such as tungsten (W). The source line layer 31functions as the source line SL explained in FIGS. 1 and 2 , and the bitline layers 33 function as the bit lines BL.

An equivalent circuit of the NAND strings 18 depicted in FIGS. 3 and 4is shown in FIG. 5 . As shown in the drawing, the NAND string 18 has theselective transistors ST1 and ST2, memory cell transistors MT0-MT7, andback gate transistor BT. As mentioned above, the memory cell transistorsMT are connected in series between the selective transistors ST1 andST2. The back gate transistor BT is connected in series between thememory cell transistors MT3 and MT4. When data are written and read out,the back gate transistor BT is always in an on-state.

The control gate of the memory cell transistor MT is connected to theword lines WL, and the control gate of the back gate transistor BT isconnected to the back gate line BG. In addition, a set of several NANDstrings 18 arranged in the second direction in FIG. 3 corresponds to thememory group GP explained in FIG. 2 .

1.1.3 Row Decoder 11

Next, the constitution of the row decoder 11 will be explained. The rowdecoders 11-0 to 11-3 are respectively installed in relation to theblocks BLK0-BLK3 and installed to select or not to select the blocksBLK0-BLK3. FIG. 6 shows the constitution of the row decoders 11-0 andthe driver circuit 12. Here, the constitution of the row decoders 11-1to 11-3 is also similar to that of the row decoder 11-0.

As shown in the drawing, the row decoder 11 is provided with blockdecoder 40 and high-breakdown voltage n channel enhancement type(E-type: the threshold is positive) MOS transistors 50-54 (50-0 to 50-7,51-0 to 51-3, 52-0 to 52-3, 53-0 to 53-3, and 54-0 to 54-3), and 55. Anyof the transistors 50-54 is a high breakdown voltage-type, the impurityconcentration of a channel region is equal, and its threshold voltage isalso equal.

<Block Decoder 40>

First, the block decoder 40 will be explained. As shown in FIG. 6 , theblock decoder 40 is provided with AND gate 41, low-breakdown voltage nchannel depletion-type MOS transistor 42, high-breakdown voltage nchannel depletion-type (D type: the threshold is negative) MOStransistors 43 and 44, high-breakdown voltage p channel E-type MOStransistor 45, and level shifter 46.

The AND gate 41 carries out an AND arithmetic of each bit of a blockaddress BA which is given from the outside. In case the block address BAindicates the corresponding block BLK0 of the row decoder 11-0, the ANDgate 41 outputs “H” level.

The level shifter 46 level-shifts and outputs the output of the AND gate41. The level shifter 46 outputs a level-shifted signal, in which theoutput of the AND gate 41 is inverted, as a signal RDECADn. In addition,the level shifts supplies a level-shifted signal, in which the output ofthe AND gate 41 is not inverted, to the transistor 42. In other words,the level shift 46 is provided with low-breakdown voltage n channelE-type MOS transistors 46 a and 46 b, low-breakdown voltage p channelE-type MOS transistors 46 and 46 d, and inverter 46 e.

The inverter 46 e inverts the output of the AND gate 41. In thetransistor 46 c, its gate is connected to an output node of the AND gate41, and a power supply voltage Vdd is applied to its source and backgate. In the transistor 46 d, its gate is connected to an output node ofthe inverter 46 e, and the power supply voltage Vdd is applied to itssource and back gate. In the transistor 46 a, its drain is connected tothe drain of the transistor 46 c, a negative voltage VBB is applied toits source and back gate, and its gate is connected to the drain of thetransistor 46 d. In the transistor 46 b, its drain is connected to thedrain of the transistor 46 d, the negative voltage VBB is applied to itssource and back gate, and its gate is connected to the drain of thetransistor 46 c. In addition, the potential of the drains of thetransistors 46 a and 46 c and the gate of the transistor 46 b turns tothe signal RDECADn.

In the transistor 42, one end of its current path is connected to thedrains of the transistors 46 d and 46 b and the gate of the transistor46 a, and a signal BSTON is transmitted to its gate. In addition, in thetransistor 43, one end of its current path is connected to the other endof the current path of the transistor 42, the other end of the currentpath is connected to a signal line TG, and the signal BSTON istransmitted to its gate. The signal BSTON is a signal that is asserted(“H” level) when address information of the block decoder 40 isintroduced.

In the transistor 45, one end of its current path is connected to thesignal line TG, the other end of the current path is connected to itsback gate, and the signal RDECADn is input into its gate. In thetransistor 44, a voltage VRDEC is applied to one end of its currentpath, the other end is connected to the other end of the current path ofthe transistor 45, and its gate is connected to the signal line TG.

When data are written, readout, and deleted, if the block address BAmatches with the corresponding block BLK0, the transistors 44 and 45 areset to an on-state, applying the voltage VRDEC (“H” level in thisexample) to the signal line TG. On the other hand, if the block addressBA does not match with the corresponding block BLK0, the MOS transistors44 and 45 are set to an off-state, the negative voltage VBB (“L” level)to the signal line TG.

<Transistor 50>

Next, the transistor 50 will be explained. The transistor 50 transfers avoltage to the word lines WL of the selective blocks BLK. In thetransistors 50-0 to 50-7, one ends of their current paths arerespectively connected to the word lines WL0-WL7 of the correspondingblock BLK0, and the other ends are respectively connected to signallines CGO-CG7. Their gates are commonly connected to the signal linesTG.

Therefore, for example, in the row decoder 11-0 corresponding to theselective block BLK0, the transistors 50-0 to 50-7 are set to anon-state, connecting the word lines WL0-WL7 to the signal lines CGO-CG7.On the other hand, in the row decoders 11-1 to 11-3 corresponding to thenonselective blocks BLK1-BLK3, the transistors 50-0 to 50-7 are set toan off-state, separating the word lines WL0-WL7 from the signal linesCGO-CG7.

<Transistors 51 and 52>

Next, the transistors 51 and 52 will be explained. The transistors 51and 52 transfer a voltage to the selective gate lines SGD. In thetransistors 51-0 to 51-3, one ends of their current paths arerespectively connected to the selective gate lines SGD0-SGD3 of thecorresponding block BLK0, the other ends are connected to the signallines SGDDO-SGDD3, their gates are commonly connected to the signal lineTG, and the negative voltage VBB is applied to their back gates. Inaddition, in the transistors 52-0 to 52-3, one ends of their currentpaths are respectively connected to the selective gate lines SGD0-SGD3of the corresponding block BLK0, the other ends are connected to a nodeSGD COM, the signal RDECADn is transmitted to their gates, and thenegative voltage VBB is applied to their back gates. The node SGD COM isa voltage such as negative VBB that sets the selective transistor ST1 toan off-state.

Therefore, for example, in the row decoder 11-0 corresponding to theselective block BLK0, the transistors 51-0 to 51-3 are set to anon-state, and the transistors 52-0 to 52-3 are set to an off-state.Thereby, the selective gate lines SGD0-SGD3 of the selective block BLK0are connected to the signal lines SGDDO-SGDD3.

On the other hand, in the row decoders 11-1 to 11-3 corresponding to thenonselective blocks BLK1-BLK3, the transistors 51-0 to 51-3 are set toan off-state, and the transistors 52-0 to 52-3 are set to an on-state.Therefore, the selective gate lines SGD0-SGD3 of the nonselective blocksBLK1-BLK3 are connected to the node SGD COM.

<Transistors 53 and 54>

The transistors 53 and 54 transfer a voltage to the selective gate linesSGS. Their connection and operation are equivalent to the substitutionof the selective gate lines SGD for the selective gate lines SGS in thetransistors 51 and 52.

In other words, in the row decoder 11-0 corresponding to thenonselective block BLK0, the transistors 53-0 to 53-3 are set to anon-state, and the transistors 54-0 to 54-3 are set to an off-state. Onthe other hand, in the row decoders 11-1 to 11-3 corresponding to theselective blocks BLK1-BLK3, the transistors 51-0 to 51-3 are set to anoff-state, and the transistors 52-0 to 52-3 are set to an on-state.

<Transistor 55>

Next, the transistor 55 will be explained. The transistor 55 transfers avoltage to the back gate lines BG. In the transistor 55, one end of itscurrent path is connected to the back gate line BG0 of the correspondingblock BLK0, the other end is connected to the signal line BGD, and itsgate is commonly connected to the signal line TG.

Therefore, in the row decoder 11-0 corresponding to the selective blockBLK0, the transistor 55 is set to an on-state, and in the row decoders11-1 to 11-3 corresponding to the selective blocks BLK1-BLK3, thetransistor 55 is set to an off-state.

1.1.4 Driver Circuit 12

Next, the constitution of the driver circuit 12 will be explained. Thedriver circuit 12 transfers a voltage required for write, readout, anddeletion of data to each of the signal lines CGO-CG7, SGDDO-SGDD3,SGSDO-SGSD3, and BGD.

As shown in FIG. 6 , the driver circuit 12 is provided with CG drivers60 (60-0 to 60-7), SGD drivers 61 (61-0 to 61-3), SGS drivers 62 (62-0to 62-3), BG driver 64, and voltage driver 63.

The voltage driver 63 generates a voltage that is used in the blockdecoder 40 and the CG drivers 60. The CG drivers 60-0 to 60-7respectively transfer a required voltage to the signal lines CGO-CG7(word lines WL0-WL7). The SGD drivers 61-0 to 61-3 respectively transfera required voltage to the signal lines SGDDO-SGDD3 (selective gate linesSGD0-SGD3). The SGS drivers 62-0 to 62-3 respectively transfer arequired voltage to the signal lines SGSDO-SGSD3 (selective gate linesSGS0-SGS3). The BG driver 64 transfers a required voltage to the backgate lines BG.

1.1.5 Sense Amplifier 13

Next, the constitution of the sense amplifier 13 will be explained withreference to FIG. 7 . FIG. 7 is a circuit diagram showing the senseamplifier 13. The constitution shown in FIG. 7 is connected to each bitline BL.

As shown in the drawing, the sense amplifier 13 is generally providedwith bit line hookup part 70, sense amplifier part 71, and a dataholding part 72.

The bit line hookup part 70 is provided with high breakdown voltage-typen channel MOS transistors 73 and 74. In the transistor 73, a signal BLSis transmitted to its gate, and one end of its current path is connectedto the bit line BL, and the other end is connected to a node BLI. In thetransistor 74, a signal BIAS is transmitted to its gate, one end of itscurrent path is connected to the corresponding bit line BL, and theother end of a potential-fixed node BLBIAS is applied to the other end.

The sense amplifier part 71 is provided with low breakdown voltage-typen channel MOS transistors 75-82, low breakdown voltage-type p channelMOS transistors 83-86, and capacitor element 87.

In the MOS transistor 75, one end of its current path is connected tothe node BLI, the other end is connected to a node COM2, and a signalBLC is transmitted to its gate.

In the MOS transistor 84, one end of its current path is connected tothe node COM2, the other end is connected to a node SRCGND (for example,0 V), and its gate is connected to a node LAT. In the MOS transistor 80,one end of its current path is connected to the node COM2, the other endis connected to a node SRC GND, and its gate is connected to a node INV.In the MOS transistor 83, one end of its current path is connected tothe node COM2, the other end is connected to a node COM1, and its gateis connected to the INV. In the MOS transistor 79, one end of itscurrent path is connected to the node COM2, the other end is connectedto the node COM1, and its gate is connected to the node LAT. In the MOStransistor 81, one end of its current path is connected to the nodeCOM1, the other end is connected to a common bus CBSA, and a signal SETis input into its gate. The common bus CBSA is a bus that connects thesense amplifier part 71 and the data latch 14. In the MOS transistor 76,one end of its current path is connected to a node N_VDD to which thepower supply voltage VDD is applied, the other end is connected to thenode COM1, and a signal BLX is input into its gate. In the MOStransistor 78, one end of its current path is connected to a node SEN,the other end is connected to the COM1, and a signal XXL is input intoits gate. In the MOS transistor 77, one end of its current path isconnected to the node N_VDD, the other end is connected to the node SEN,and a signal HLL is input into its gate.

In the capacitor element 87, one electrode is connected to the node SEN,and a clock is input into the other electrode.

In the MOS transistor 82, one end of its current path is connected tothe node INV, the other end is connected to the common bus CBSA, and asignal RST_N is input into its gate. In the MOS transistor 86, one endof its current path is connected to the node INV, and its gate isconnected to the node SEN. In the MOS transistor 85, one end of itscurrent path is connected to the node N_VDD, the other end is connectedto the other end of the current path of the MOS transistor 86, and asignal STBn is input into its gate.

The data holding part 72 latches data at the node INV as a connectingnode of the MOS transistors 82 and 86. In other words, the data holdingpart 72 is provided with n channel MOS transistors 88-90 and p channelMOS transistors 91-93.

In the MOS transistor 88, one end of its current path is connected tothe node INV, and the signal STBn is input into its gate. In the MOStransistor 89, one end of its current path is connected to a node N_VSS,the other end is connected to the other end of the current path of theMOS transistor 88, and its gate is connected to the node LAT. A voltageVSS (for example, 0 V) is applied to the node N_VSS. In the MOStransistor 92, one end of its current path is connected to the node INV,and its gate is connected to the node LAT. In the MOS transistor 91, oneend of its current path is connected to the node N_VDD, the other endthereof is connected to the other end of current path of the MOStransistor 92, and a signal RST_P is applied to the gate. In the MOStransistor 90, one end of its current path is connected to the nodeN_VSS, the other end is connected to the node LAT, and its gate isconnected to the node INV. In the MOS transistor 93, one end of itscurrent path is connected to the node N_VDD, the other end is connectedto the node LAT, and its gate is connected to the node INV.

The signals SET and RST_N are turned to “H” at a time of a resetoperation, so that the nodes COM1 and INV are turned to “L” level (0 V)and the node LAT is turned to “H” level (VDD). On the other hand, at atime of an ordinary operation, these signals are turned to “L” level,setting the transistors 81 and 82 to an off-state. In addition, thesignal RST_N is turned to “H” level when data of the sense amplifier 13are transferred to the data latch 14. Moreover, the signal RST_P can beturned to “H” at the time of the reset operation and turned to “L” levelat the time of the ordinary operation.

In the constitution, when data are written, the signal BLS is turned to“H” level, and the bit lines BL are respectively connected to thecorresponding sense amplifier parts 71. In addition, the signal BLC isturned to “H” level, setting the transistor 75 to an on-state. Thesignal BIAS is turned to “L” level, setting the transistor 74 to anoff-state. Moreover, write data are transferred to the data holding partfrom the data latch 14. In the sense amplifiers 13 corresponding toselected bit lines (bit lines corresponding to memory cells whosethreshold is to be raised by injecting electric charges), the nodeINV=“L,” and the node LAT=“L.” Therefore, the transistors 83 and 79 areset to an off-state, and the transistors 84 and 80 are set to anon-state, applying 0 V to the selective bit lines. In the senseamplifiers 13 corresponding to nonselected bit lines, the node INV=“L,”and the node LAT=“H.” Therefore, the transistors 84 and 80 are set to anoff-state, and the transistors 83 and 79 are turned to an on-state. As aresult, nonselected bit lines are charged up to VDD by the transistor76.

Data are read out twice. At the time of the first readout, the signalBLS in all the sense amplifiers 13 is turned to “H” level, so that thebit lines BL are respectively connected to the corresponding senseamplifier parts 71. In addition, the signal BLC is turned to “H” level,setting the transistor 75 to an on-state. Next, the transistor 76charges the bit lines BL via the current paths of the transistors 83 and79 and the nodes COM1 and COM2. The potential of the bit lines BL is setto a potential VBL (for example, 0.5 V) by the transistor 75. Inaddition, the capacitor element 87 is charged by the transistor 77,raising the potential of the node SEN.

If the corresponding memory cell is in an on-state, the potential of thenode SEN is lowered, and the transistor 86 is set to an on-state. Next,the signal STBn is turned to “H” level, so that the node INV is turnedto “H” and the node LAT is turned to “L.” As a result, the transistors84 and 80 are set to an on-state, fixing the bit line BL to 0 V. On theother hand, if the corresponding memory cell is in an off-state, thepotential of the node SEN is not lowered, and the transistor 86 is in anoff-state. Therefore, the node INV is turned to “L,” and the node LATmaintains “H.”

The second readout is carried out only on the bit line that decided thecorresponding bit line has been in an off-state in the first readout.The operation of the sense amplifier 13 corresponding to this bit lineis similar to that of the first readout. On the other hand, for the bitline that decided the corresponding memory cell has been in an on-statein the first readout, the transistor 74 is set to an on-state in thecorresponding sense amplifier 13, so that the bit line BL is connectedto the node BLBIAS, fixing the potential.

Next, the sense amplifier 13 selected by the data control circuit 15,the transistor 82 is set to an on-state, so that data in the holdingcircuit 72 are transferred to the data latch 14 via the common bus CBSA.

1.2 Operation of Semiconductor Storage Device 1

Next, the operation of the NAND-type flash memory 1 with theconstitution mentioned above will be briefly explained.

1.2.1 Write Operation

First, a write operation will be explained with reference to FIG. 8 .FIG. 8 is a timing chart showing the potential of each wiring at a timeof a write operation.

As shown in FIG. 8 , first, the sense amplifier 13 transfers write datato each bit line BL. In case the threshold is raised by injectingelectric charges into the charge storage layer, “L” level (for example,VSS=0 V) is applied to the bit lines BL, and otherwise, “H” level (forexample, VDD=2.5 V) is applied. In addition, for example, 2.5 V isapplied to the source line SL by a source line driver not shown in thedrawing.

Moreover, in the row decoder 11, the block address BA is decoded by theblock decoder 40, and in selective blocks, TG=“H” level, and thetransistors 50, 51, and 53 of the row decoder 11 are set to an on state.Furthermore, in the row decoder 11 corresponding to the nonselectiveblocks, TG=“L” level (for example, VBB), setting the transistors 50, 51,and 53 to an off-state and the transistors 52 and 54 to an on-state.

Therefore, in the nonselective blocks, the negative voltage VBB istransferred to the selective gate lines SGD and SGS by the transistors52 and 54, cutting off both the selective transistors ST1 and ST2.

On the other hand, in the selective blocks, the voltage VSGD (forexample, 4 V) is transferred to the selective gate line SGDcorresponding to a memory group including a selective page by the SGDdriver 61 and the SGS driver 62, so that the negative voltage VBB istransferred to the selective gate line SGS. Thereby, in the memorygroup, the selective transistor ST1 is set to an on-state, and theselective transistor ST2 is set to an off-state. The negative voltageVBB is transferred to the selective gate lines SGD and SGS correspondingto the other memory groups. Therefore, in these memory groups, both theselective transistors ST1 and ST2 are set to an off-state.

Next, the voltage VSGD is lowered to about 2.5 V from 4 V. This voltageturns on the selective transistor ST1, when “L” data are transferred tothe bit line BL, and is cut off when “H” data are transferred.

Next, the CG driver 60 transfers the voltage to each signal line CG. Inother words, the CG driver 60 corresponding to selective word linestransfers VPGM, and the CG driver 60 corresponding to nonselective wordlines transfers VPASS (or VISO). VPGM is a high voltage for turning onthe memory cell transistors, regardless of holding data (however,VPASS<VPGM). VISO is a voltage for turning off the memory celltransistors, regardless of holding data (VISO<VPASS). Therefore, in theselective blocks, since the transistor 50 is set to an on-state, thesevoltages are transferred to the word lines WL0-WL7. On the other hand,in the nonselective blocks, since the transistor 50 is set to anoff-state, these voltages are not transferred to the word lines WL. Inother words, the word lines WL0-WL7 of the nonselective blocks areelectrically in a floating state.

In this manner, in the selective memory cells, the voltage VPGM isapplied to the control gate, and the channel is turned to 0 V.Therefore, electric charges are injected into the charge storage layer,raising the threshold level of the selective memory cells. In thenonselective memory cells, the channel is electrically floated, so thatits potential is raised by coupling with the periphery. The thresholdlevel of the selective memory cells is not changed.

1.2.2 Readout Operation

Next, a readout operation will be explained with reference to FIG. 9 .FIG. 9 is a timing chart showing the potential of each wiring at a timeof a readout operation.

As shown in FIG. 9 , first, the CG driver 60 generates voltages VCGRVand VREAD. The voltage VCGRV is a voltage to be applied to the selectiveword lines and corresponds to desired readout data (threshold level).The voltage VREAD is a voltage for turning on the memory celltransistors, regardless of holding data (VREAD>VCGRV).

In the selective blocks, since the transistor 50 is set to an on-statesimilarly to the write operation, these voltages VCGRV and VREAD aretransferred to the word lines WL. On the other hand, in the nonselectiveblocks, since the transistor 50 is set to an off-state, the word linesWL are electrically floated.

Next, the voltage is transferred to the selective gate lines SGD andSGS. In the selective memory groups of the selective blocks, thevoltages VSGD and VSGS (for example, 4 V) are transferred to theselective gate lines SGD and SGS by the transistors 51 and 53.Therefore, the selective transistors ST1 and ST2 are set to an on-state.In the nonselective memory groups of the selective blocks, the voltageVBB is transferred to the selective gate lines SGD and SGS bytransistors 51 and 53. Therefore, the selective transistors ST1 and ST2are set to an off-state. In addition, in the nonselective groups, thevoltage VBB is transferred to the selective gate lines SGD and SGS bythe transistors 52 and 54. Therefore, the selective transistors ST1 andST2 are set to an off-state.

Moreover, VSS is applied to the source line SL, and for example, VBL(0.5 V) is applied to the bit lines BL.

In this manner, the voltage VCGRV is applied to the control gate of theselective memory cells, and its current path is electrically connectedto the bit lines BL and the source line SL. If the selective memorycells are in an on-state, current flows from the bit lines BL to thesource line SL. A readout operation is carried out by detecting thiscurrent through the sense amplifiers 13.

1.3 Arrangement of Memory Cell Arrays and Peripheral Circuits

Next, the arrangement of the memory cell arrays 10 and peripheralcircuits in the NAND-type flash memory 1 with the constitution mentionedabove will be explained. In the following, circuits other than thememory cell array 10 are sometimes called peripheral circuits.

1.3.1 Arrangement of Peripheral Circuits in a Chip

FIG. 10 is a planar layout diagram showing a semiconductor chip in whichthe NAND-type flash memory 1 of this embodiment is formed.

As shown in the drawing, the sense amplifier 13 and the data latch 14are formed under the memory cell array 10 and arranged in the firstdirection D1 along the bit lines BL. In addition, the data controlcircuit 15, input and output buffer 16, and input and output pad group17 are arranged in the first direction D1. Moreover, the input andoutput pads 19 are collected at one side of the semiconductor chip andarranged along one side (the second direction D2) of the semiconductorchip.

1.3.2 Connection of Memory Cell Array and Sense Amplifiers

Next, the connection of the memory cell array and the peripheralcircuits such as sense amplifiers will be explained. FIG. 11 is a planview showing the connection relation between the memory cell array 10and the sense amplifier 13 and the data latch 14 installed in the lowerpart of the memory cell array. In FIG. 11 , the upper figure is a planview of the memory cell array 10, depicting locations where bit linesare formed. In addition, the lower figure shows the layout of the senseamplifier 13 and the data latch 14 arranged in the lower part of thememory cell array 10, the control circuit 15, and the input and outputbuffer 16. FIG. 12 is a cross section along the first direction D1 ofFIG. 11 , especially showing a sectional constitution of the part inwhich the bit line BL0 is seen.

As shown in the FIG. 11 , 128 pieces of upper bit lines BLU(BLU0-BLU127) are formed in the first direction D1. In addition,connecting parts RCU (RCU1, RCU2) of the sense amplifier 13 areinstalled in the memory cell array 10. In the connecting parts RCU,several contact plugs CP1 arranged in the second direction D2 areformed, and no memory cell is formed.

The connecting parts RCU1 and RCU 2 are arranged with a mutualseparation in the first direction. Therefore, it can be said that thememory cell array 10 is divided into first to third regions R1-R3respectively including a set 81 of memory cells by these connectingparts RCU1 and RCU2.

The upper bit lines BLU pass above these connecting parts RCU. The evenupper bit lines BLU0, BLU2, BLU4, . . . are respectively connected tothe contact plugs CP1-0, CP1-2, and CP1-4 in the connecting RCU2. On theother hand, the odd upper bit lines BLU1, BLU3, BLU5, . . . arerespectively connected to the contact plugs CP1-1, CP1-3, CP1-5, . . .in the connecting part RCU1.

As shown in FIGS. 11 and 12 , the contact plugs CP1 connect to the senseamplifier 13 installed in the lower part of the memory cell array. Thesense amplifier 13 is provided with a sense amplifier circuit SAC andconnecting parts RCL1 and RCL2 installed in the first direction.

The sense amplifier circuit SAC is installed for each upper bit line BLUon the semiconductor substrate 20 and has the constitution explained inFIG. 7 . In addition, several sense amplifier circuits SAC are arrangedin the first direction.

The connecting parts RCL1 and RCL2 are respectively regions, which aremade to correspond to the connecting parts RCU1 and RCU2, where thecorresponding contact plugs CP1 are formed. In other words, the contactplugs CP1-1, CP1-3, CP1-5, . . . are installed in the connecting partRCL1, and the contact plugs CP1-0, CP1-2, CP1-4, . . . are installed inthe connecting part RCL2.

In the lower part of the memory cell array 10 and above the senseamplifier 13, 128 pieces of lower bit lines BLL (BLL0-BLL127) are formedextending in the first direction D1. The lower bit line BLL connects thecontact plugs CP1 and their corresponding sense amplifier circuits SAC.In other words, the upper bit lines BLU, the low bit lines BLL, and thecontact plugs CP1 correspond to the bit lines BL explained up to now.

In the sense amplifier 13, the sense amplifier circuits SACcorresponding to the odd bit lines BL1, BL3, BL5, . . . are sequentiallyarranged between the connecting parts RCL1 and RCL2, and the senseamplifier circuit SAC corresponding to the even bit line BL0, BL2, BL4,. . . are sequentially arranged in the opposite region via theconnecting part RCL2. In addition, each sense amplifier circuit SAC andits corresponding contact plugs CP1 are electrically connected by thelower bit line BLL and the contact plug CP2.

The connection relation between the memory cell array 10 and the senseamplifier 13 can also be explained as follows. In other words, the bitline BL includes the upper bit line BLU on the memory cell array 10, thelower bit line BLL in the lower part of the memory cell array 10, andthe contact plugs CP1 for connecting both of them.

In the memory cell array 10, several connecting parts (the firstconnecting part RCU1 and the second connecting part RCU2) for formingthe contact plugs CP1 are installed, and the first connecting part RCL1and the second connecting part RCL2 are installed in accordance withthem in the sense amplifier 13.

The upper bit line BLU includes a first upper bit line BLUa and a secondupper bit line BLUb. The lower bit line BLL includes a first lower bitline BLLa and a second lower bit line BLLb.

In addition, the first upper bit line BLUa is connected to the firstlower bit line BLLa in the first connecting part RCU1, and the secondupper bit line BLUb is connected to the second lower bit line BLLb inthe second connecting part RCU2.

The sense amplifier circuits SAC are arranged in the first direction. Inaddition, the sense amplifier circuit SAC, which is connected to thefirst lower bit line BLLa, is installed in the region (the first senseamplifier region) between the first connecting part RCL1 and the secondconnecting part RCL2. On the other hand, the sense amplifier circuitSAC, which is connected to the second lower bit line BLLb, is notinstalled between the first connecting part RCL1 and the secondconnecting part RCL2 but is installed in the region (the region betweenthe RLC2 and the data latch 14 in FIG. 11 ; the second sense amplifierregion) opposite to the first connecting part RCL1 via the secondconnecting part RCL2.

Therefore, the first lower bit line BLLa is formed only in the firstsense amplifier region, and its length is about the width in the firstdirection of the first sense amplifier region, even at its maximumlength. Similarly, the second lower bit line BLLb is formed only in thesecond sense amplifier region, and its length is about the width in thefirst direction of the second sense amplifier region, even at itsmaximum length. In addition, the number of lower bit lines BLL, whichare included in the first and second sense amplifier regions, is a halfof the total number of upper bit lines BLU.

Moreover, the first upper bit lines BLUa are adjacent via the secondupper bit lines BLUb. As for the second upper bit lines BLUb, similarly,the second upper bit lines BLUb are adjacent via the first upper bitlines BLUa. The lower bit lines BLL are also similarly adjacent.Therefore, the adjacent space between the first lower bit lines BLLa inthe first sense amplifier region and the adjacent space between thesecond lower bit lines BLLb in the second sense amplifier region aretwice of the adjacent space of the upper bit lines BLU.

The above explanation is continued with reference to FIGS. 11 and 12 .The sense amplifier circuit SAC is further connected to the 16-bitcommon bus CBSA via the contact plugs CP3 (CP3-1, CP3-2) and furtherconnected to the data latch 14 via the contact plug CP4. The number ofsense amplifier circuits SAC is 128 pieces, and the bus width of thecommon bus CBSA is 16 bits. Therefore, data are transferred to the datalatch 14 via the common bus CBSA from 16 pieces of sense amplifiercircuits SAC selected by the data control circuit 15. With this transferoperation of 8 times, the data in all the sense amplifier circuits SACare transferred to the data latch 14.

In addition, the data in the data latch 14 are connected to the datacontrol circuit 15 via the contact plug CP5, a 16-byte common bus CBD,and the contact plug CP7 and further connected to the input and outputbuffer 16 by a 16-bit data bus.

FIG. 13 is a cross section illustrating further details of the sectionalstructure of the NAND-type flash memory 1, especially showing a regionincluding a word line hookup part. The word line hookup part isinstalled at the end of the memory cell array 10 and is a region wherethe word lines WL and the selective gate lines SGD and SGS are connectedto the peripheral circuits (row decoders 11).

As shown in the drawing, a metal wiring layer passing above theperipheral circuits installed in the lower part of the memory cell array10 is installed in two layers (M0, M1). The lower bit lines BLLexplained in FIGS. 11 and 12 are formed of any of the metal wiringlayers M0 and M1.

In addition, the metal wiring layer passing through the upper part ofthe memory cell array 10 is installed over three layers (D0-D2). Thesource line SL is formed of the metal wiring layer D0 of the firstlayer, and the upper bit line BLU is formed of the metal wiring layer D1of the second layer. Moreover, the word line WL and the selective gatelines SGD and SGS are connected to the row decoder 11 via at least anyof the metal wiring layers D0-D2 of the first layer to the third layer.

1.4 Effects of this Embodiment

As mentioned above, the constitution of this embodiment can improve theoperation speed of the NAND-type flash memory 1. This effect will beexplained below in detail.

In the conventional NAND-type flash memories in which memory cells aretwo-dimensionally arranged on a semiconductor substrate, an architecturein which sense amplifiers, data latch, and their control circuit andtransfer system are divided into a half, and each of them are arrangedat both sides of a memory cell array has often been employed(hereinafter, this architecture is referred to as a “both-side senseamplifier system”). However, according to the both-side sense amplifiersystem, a data bus had to be connected to input and output pads from twoseparate positions, so that the data bus is lengthened, thereby causingdifficulty in a high-speed operation.

Accordingly, in the recent NAND-type flash memories, sense amplifiers,data latch, and their control circuit and transfer system have beenmainly arranged at one side of a memory cell array (hereinafter,referred to as an “one-side sense amplifier system”). One of the reasonsfor this is that as a high-speed operation of data is in demand, whenthese data latch and transfer system are collected as one unit at oneside of the array and arranged at the side near a pad column, the lengthof the data bus line is shortened, so that the design in which skew,etc., are considered is easy, thereby easily realizing a high-speed datatransfer. In addition, with the collective arrangement of the circuits,wirings and driving circuits can be reduced, compared with the both-sidesense amplifier system, thus being able to reduce the chip area.

Therefore, the one-side sense amplifier system is generally superior tothe both-side sense amplifier system. Accordingly, even in the NAND-typeflash memory in which memory cells are three-dimensionally laminated ona semiconductor substrate (hereinafter, referred to a three-dimensionallaminated NAND-type flash memory), sense amplifier and a data latchsystem are arranged in the lower part of a memory cell array, and theone-side sense amplifier system is preferably applied.

FIG. 14 is a plan view showing a memory cell array and peripheralcircuits in the lower part of the memory cell array, when the one-sidesense amplifier system is applied to the three-dimensional laminatedNAND-type flash memory. FIG. 14 corresponds to FIG. 11 explained in theembodiment, and the same reference symbols are given to the sameconstituent elements as those of the embodiment.

As shown in the drawing, the upper bit lines BLU on the memory cellarray 10 are connected to the lower bit lines BLL in the lower part ofthe memory cell array 10 in a contact part at the outside of the memorycell array 10 and connected to the sense amplifier circuits SAC, and inthe sense amplifier circuits SAC, the upper bit lines are connected tothe sense amplifier parts 71 via transistors of the bit line hookuppart. As mentioned above, the sense amplifier circuits SAC are installedfor each bit line. Therefore, if the number of bit lines BL is 128pieces, 128 pieces of sense amplifier circuits SAC are also installed.

In this constitution, there is a possibility that the following problemsare generated. First, the lower bit lines BLL are lengthened. This isdue to the collective arrangement of the sense amplifiers at one side.In other words, the lower bit line BLL0 for connecting the farthestsense amplifier circuit SAC from the contact plugs CP1 has at least alength passing above all the sense amplifier circuits SAC. This lengthis about twice of the both-side sense amplifier system. Therefore,signal delay occurs in the bit lines BL, leading to the degradation ofthe readout time or program time. In addition, the wiring length issignificantly different for the lower bit lines BLL0 and BLL127.Therefore, the design of operation timing, etc., is difficult.

Secondly, wiring congestion in the lower part of the memory cell arraybecomes a distinct problem. As shown in FIG. 14 , all the upper bitlines BLU are connected to the lower bit lines BLL in the contact part.Therefore, in this region, the bit lines BLL must be formed by anon-pitch design rule (minimum working dimension) similarly to the BLU.Therefore, other wirings are difficult to pass through this region. Thisphenomenon also occurs similarly in the sense amplifier circuits SACnear the contact part. In other words, the control signal lines or busesof the sense amplifiers cannot be formed in the first direction by usingthe same wiring layer as that of the lower bit lines BLL, and the numberof wiring layer in the lower part of the memory cell array is requiredto be increased. As a result, the manufacture cost is raised.

According to the constitution of this embodiment, the aforementionedproblems can be solved. In other words, in this embodiment, the memorycell array 10 is divided into several regions R1-R3 to distributelead-in openings under the memory cell array 10 of the bit lines BL. Asa result, the wiring congestion of the lower part of the memory cellarray 10 can be relaxed, thus being able to realize the one-side senseamplifier system.

More specifically, the wirings are most congested in connecting openingsof the bit lines BL and the sense amplifiers 13. Therefore, theconnecting openings are distributed and arranged in several groups underthe memory cell array 10. In other words, first, connecting parts of thefirst bit line group (odd bit lines BL1, B13, and the first senseamplifier group (sense amplifier circuits SAC corresponding to the oddbit lines), which are led in the lower part of the memory cell array 10,are installed in the first memory cell array divided parts RCU1 andRCL1. In the divided parts RCU1 and RCL1, the number of bit lines BL,which are led in the lower part of the memory cell array 10, is 64pieces (a half of 128 pieces in total). Therefore, the wiring congestionin this region is a half of the case of FIG. 14 . In addition, the firstbit line group is connected to the sense amplifier circuits SAC in thelower part of the memory cell array, so that the number of lower bitlines BLL in the first direction is reduced, thereby further relaxingthe wiring congestion.

Next, the second memory cell array divided parts RCU2 and RCL2 areinstalled in the part to which the lower bit line BLL1 is connected inthe farthest sense amplifier circuit SAC. In addition, connecting partsof the second line group (even bit lines BL0, BL2, . . . ) and thesecond sense amplifier group (sense amplifier circuits SAC correspondingto the even bit lines), which are led in the lower part of the memorycell array via the divided parts RCU2 and RCL2, are installed.

In this manner, the memory cell array 10 is divided into several regionsR1-R3, and the respective bit lines BL divided into groups and the senseamplifiers 13 are connected in the lower part of the divided regions R2and R3. Therefore, the wiring length of the lower bit lines BLL isshortened, enabling a high-speed operation. In addition, the wiringcongestion in the lower part of the memory cell array 10 is relaxed, andthe number of wiring layer can be reduced, thus being able to cut downthe manufacture cost.

2. EMBODIMENT 2

Next, the semiconductor storage device of a second embodiment will beexplained. This embodiment provides several examples of the connectingparts RCU and RCL. In the following, only the differences from the firstembodiment will be explained.

2.1 First Example

First, a first example will be explained with reference to FIG. 15 .FIG. 15 is a plan view illustrating the connection relation between thememory cell array 10 and the sense amplifiers 13 and the data latch 14installed in its lower part, showing the same region as that of FIG. 11explained in the first embodiment.

As shown in the drawing, in this example, the connecting part RCU1 isinstalled at the outside of the memory cell array 10 in the constitutionof FIG. 11 explained in the first embodiment. At the same time, theconnecting part RCL1 is also installed at the outside of the senseamplifier 13. In this case, an effect similar to that of the firstembodiment can be obtained.

2.2 Second Example

Next, a second example will be explained with reference FIG. 16 . FIG.16 is a plan view illustrating the connection relation between thememory cell array 10 and the sense amplifier 13 and the data latch 14installed in the lower part of the memory cell array, showing the sameregion as that of FIG. 11 explained in the first embodiment.

As shown in the drawing, in this example, the number of connecting partsRCU and RCL is 3 in the constitution of FIG. 11 explained in the firstembodiment. Therefore, the memory cell array 10 is divided into fourregions. In this case, an effect similar to that of the first embodimentcan also be obtained. In addition, the average of the length of thelower bit lines BLL is shorter than that of the first embodiment.Therefore, a higher-speed operation is possible.

The number of connecting parts RCU and RCL may be 4 pieces or more.Moreover, through the combination of the first example and the secondexample, any of the connecting parts RCU may be installed at the outsideof the memory cell array 10 in the constitution of FIG. 16 .

2.3 Third Example

Next, a third example will be explained with reference to FIG. 17 . FIG.17 is a plan view illustrating a partial region of the memory cell array10, especially showing a planar pattern of the upper bit lines BLU.

As shown in the drawing, the upper bit lines BLU may be formed so thatthey intersect with the adjacent upper bit lines BLU. In addition, theconnecting part RCU may be formed in the intersecting region. Forexample, in the upper bit lines BLU0 and BLU1, the upper bit line BLU0is formed of the metal wiring layer D1 of the second layer in the firstand second regions R1 and R2 and the connecting part RCU. On thecontrary, the upper bit line BLU1 is formed of the metal wiring layer inthe first and second regions R1 and R2; however, it is connected to themetal wiring layer D3 of the third layer in the connecting RCU andpassed above the upper bit line BLU0 by the metal wiring layer D3.

Therefore, with the change of the positions of the adjacent upper bitlines BLU for each region, the capacitance of the upper bit lines BLUcan be appropriately designed. In addition, at the positions where theupper bit lines BLU are replaced, it is necessary to form a contact plugfor connecting at least one of the upper bit lines BLU to the metalwiring layer of the upper layer. Therefore, if the contact plugs CP1,which are connected to the lower bit lines BLL, is formed in thisregion, the area increase due to the installation of the connecting partRCU can be suppressed.

3. EMBODIMENT 3

Next, the semiconductor storage device of a third embodiment will beexplained. This embodiment relates to a method for connecting bit linesBL and sense amplifiers and provides examples of the connecting methoddifferent from those of the first and second embodiments. In thefollowing, only the differences from the first embodiment will beexplained.

3.1 First Example

First, a first example will be explained with reference to FIGS. 18 and19 . FIG. 18 is a plan view illustrating the connection relation betweenthe memory cell array 10 and the sense amplifiers 13 installed in thelower part of the memory cell array, showing the same region as that ofFIG. 11 explained in the first embodiment. However, for simplicity, adata latch and wirings for connecting the sense amplifier and the datalatch are omitted in the drawing. In addition, FIG. 19 is a crosssection of FIG. 18 , especially showing the region where the lower bitline BLL0 is seen.

As shown in the drawings, in this example, in the constitution of FIG.11 explained in the first embodiment, the lower bit lines BLL, which areconnected to the upper bit lines BLU by the connecting part RCL, arearranged in the first direction D1 at both sides via the connecting partRCL. More specifically, this constitution is as follows.

As mentioned above, the even lower bit lines BLL0, BLL2, BLL4, . . . areconnected to the upper bit lines BLU via the connecting part RCL2. Theselower bit lines are sequentially arranged so that they face each othervia the connecting part RCL2. In other words, the lower bit lines BLL0,BLL4, BLL8, . . . and the sense amplifier circuits SAC, which areconnected to these lower bit lines, are installed below the region R3.On the other hand, the lower bit lines BLL2, BLL6, BLL10, and the senseamplifier circuits SAC, which are connected to these lower bit lines,are installed below the region R2.

The odd lower bit lines BLL1, BLL3, BLL5, . . . are connected to theupper bit lines BLU via the connecting part RCL1. These lower bit linesare sequentially arranged so that they face each other via theconnecting part RCL1. In other words, the lower bit lines BLL1, BLL5,BLL9, . . . and the sense amplifier circuits SAC, which are connected tothese lower bit lines, are installed below the region R2. On the otherhand, the lower bit lines BLL3, BLL7, BLL12, . . . and the senseamplifier circuits SAC, which are connected to these lower bit lines,are installed below the region R1.

Therefore, the lower bit lines BLU may be led out to both sides as wellas one side of the connecting part RCL. According to this constitution,the adjacent space of the lower bit lines BLL can be twice of the caseshown in FIG. 11 , making the wiring layout easy. In addition, thelength of each low bit line BLL can be about a half of the case shown inFIG. 11 . Therefore, the length of the lower bit lines BLL can befurther shortened, enabling a high-speed operation.

Here, in FIGS. 18 and 19 , the method for leading out the lower bitlines to both sides is applied to FIG. 11 ; however, this method canalso be applied to the constitution explained in FIGS. 15-17 .

3.2 Second Example

Next, a second example will be explained with reference to FIGS. 20 and21 . FIG. 20 is a schematic and a plan view showing sense amplifiers 13installed in the lower part of the memory cell array 10. The plan viewof FIG. 20 shows the same region as that of FIG. 18 . However, in FIG.20 , for simplicity, a data latch and wirings for connecting the senseamplifiers and the data latch are omitted. In addition, FIG. 21 is across section along X1-X1′ line of FIG. 20 .

As shown in FIG. 20 , the sense amplifier 13 can be largely divided intotwo regions of a high-breakdown voltage transistor region HVR and alow-breakdown voltage transistor region LVR. The region HVR is a regionwhere a relatively high voltage is handled, and the hookup part 70corresponds to this region. The transistor in the region HVR, forexample, is a high-breakdown voltage transistor with a thick gateinsulating film. On the contrary, the low-breakdown voltage transistorregion LVR is a region where a voltage lower than that of the region HVRis handled, and the sense amplifier part 71 and the data holding part 72correspond to this region. The transistor in the region LVR, forexample, is a low-breakdown voltage transistor with a gate insulatingfilm thinner than that of the transistor in the region HVR.

Next, in this example, as shown in FIGS. 20 and 21 , the high-breakdownvoltage transistor region HVR in each sense amplifier circuit SAC iscollectively arranged near the connecting part RCL, and thelow-breakdown voltage transistor regions LVR are sequentially arrangedat remote positions from the connecting part RCL.

In other words, the contact plugs CP1 in the connecting part RCL areconnected to the high-breakdown voltage transistor region HVR by thelower bit lines BLL and the contact plug CP2. More specifically, thiscontact plug is connected to one end of the current paths of thetransistors 73 and 74. Next, the other end of the current paths of thetransistors 73 and 74 are connected to the low-breakdown voltagetransistor region LVR via the contact plug CP10, the node BLI (metalwiring layer installed at the same height as that of the lower bit linesBLL), and the contact plug CP11. More specifically, these other ends areconnected to one end of the current path of the transistor 75.

In the constitution, the length of each low bit line BLL is about thesame. On the contrary, the wiring layers BLI have a wiring lengthdifferent from each other similarly to the lower bit lines BLL of FIG.11 . In other words, the wiring layers BLI0 and BLI1 in which thecorresponding region LVR is installed in the farthest place is longest,and the wiring layers BLI126 and BLI127 (not shown in the drawing) inwhich the corresponding region LVR is installed at the nearest place isshortest.

Here, in FIGS. 20 and 21 , the method for dividing the sense amplifiersinto the regions HVR and LVR is applied to FIG. 11 ; however, thismethod can also be applied to the constitution explained in FIGS. 15-19.

4. MODIFIED EXAMPLES

As mentioned above, the semiconductor storage device 1 of theembodiments is provided with the peripheral circuits 13, the memory cellarray 10, the upper bit lines BLU, and the first and second connectingparts RCU1 and RCU2. The peripheral circuits 13 are installed on thesemiconductor substrate 20. The memory cell array 10 is installed on theperipheral circuits 13 via an interlayer dielectric, and the firstregion R1 and the second region R2 respectively including several memorycells MT laminated on the interlayer dielectric are arranged in thefirst direction D1. The upper bit lines BLU are installed in the firstdirection D1 on the memory cell array 10 and electrically connected withthe memory cell MT. The first and second connecting parts RCU1 and RCU2are respectively provided with the contact plugs CP1 arranged in thesecond direction D2 orthogonal to the first direction D1, and one ofthese connecting parts is installed between the first and second regionsR1 and R2. The upper bit lines BLU are provided with the first upper bitlines (odd bit lines), which are connected to the peripheral circuits 13via the contact plugs CP1 of the first connecting part RCU1 and thesecond upper bit lines (even bit lines) which are connected to theperipheral circuits 13 via the contact plugs CP1 of the secondconnecting part RCU2.

With this constitution, the operation speed of the semiconductor storagedevice 1 can be improved. However, the present disclosure is not limitedto the aforementioned embodiments but can be variously modified. Forexample, in the embodiment, as explained in FIG. 10 , the case where theinput and output pads 19 are collectively installed at one side of thechip and arranged in the second direction D2 orthogonal to the bit linesBL has been mentioned as an example. However, as shown in the planarlayout of the semiconductor chip of FIG. 22 , the input and output pads19 may also be installed in the first direction D1 parallel with the bitlines BL. However, the constitution of FIG. 11 is generally moredesirable because the data bus DB length is shortened.

Or the both-side sense amplifier system explained in the firstembodiment may also be adopted. A planar layout of this case is shown inFIGS. 23 and 24 . As shown in the drawings, the sense amplifiers 13 andthe data latches are divided into two and arranged at two positions ofthe region in the lower part of the memory cell array 10. In this case,the aforementioned embodiments may also be applied.

In addition, the metal wiring layers M0 and M1 of two layers explainedin FIG. 13 can be used for various usages. For example, the metal wiringlayer M1 of the second layer can be used in the lower bit lines BLL,common bus CBSA, CBD, DB, etc. The metal wiring layer M0 of the firstlayer, which is formed in the layer lower than the metal wiring layerM1, for example, can be used in power source line, GND line, or globalcontrol signals which are broadly used NAND-type flash memory 1.

Moreover, the memory cell array shown in FIG. 2 may have a constitutionas shown in FIG. 25 . FIG. 25 is a circuit diagram showing the blockBLK0, and the other blocks BLK1-BLK3 can also have similarconstitutions. As shown in the drawing, the word lines WL0-WL3, backgate lines BG, and the even selective gate lines SGD0 and SGD2, and theodd selective gate lines SGS1 and SGS3 are led out to one end of thememory cell array 10. On the contrary, the word lines WL4-WL7, the evenselect gate lines SGS0 and SGS2, and the odd selective gate lines SGD1and SGS3 are led out to the other end opposite to the one end. Thisconstitution may also be adopted. In this constitution, for example, therow decoder 11 may be divided into two row decoders and arrangedoppositely to each other via the memory cell array 10. In addition, theselective gate lines SGD0, SGD2, SGS1, and SGS3, the word lines WL0-WL3,and the back gate lines BG may be selected by one row decoder, and theselective gate lines SGS0, SGS2, SGD1, and SGD3 and the word linesWL4-WL7 may be selected by the other row decoder. According to thisconstitution, the congestion of wirings such as selective gate lines andthe word lines of the region (including the row decoder 11) between thedriver circuit 12 and the memory cell array 10 can be relaxed.

Furthermore, in the aforementioned embodiments, the three-dimensionallaminated NAND-type flash memory has been mentioned as an example of thesemiconductor storage device. However, the three-dimensional laminatedNAND-type flash memory is not limited to the constitutions of FIGS. 3-5. For example, the semiconductor layer 26 may be one columnar shapeinstead of the U type shape. In this case, the transistors BT areunnecessary. In addition, the aforementioned embodiments are not limitedto the NAND-type flash memory but can be applied to generalsemiconductor devices in which memory cells are three-dimensionallylaminated and peripheral circuits are arranged right under the memorycell array. As such a semiconductor device, for example, there is ReRAM(Resistive RAM) in which memory cells are formed of a non-ohmic elementand a resistance-variable material.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor storage device, comprising: aplurality of word lines extending in a first direction and a seconddirection, and separated from each other in a third direction, thefirst, second, and third directions crossing one another; a plurality ofsense amplifier circuits partially overlapping the word lines whenviewed in the third direction; a plurality of memory stringsintersecting the word lines, and extending in the third direction; aplurality of first bit lines extending in the first direction andseparated from each other in the second direction; a plurality of secondbit lines between the word lines and the sense amplifier circuits in thethird direction, and extending in the first direction; and a pluralityof contact plugs extending in the third direction, respectivelyconnected connecting the first bit lines and the second bit lines, andarranged such that one of the a first contact plug of the plurality ofcontact plugs, which is between second and third contact plugs of theplurality of contact plugs in the second direction, is offset withrespect to the second and third contact plugs in the first direction. 2.The semiconductor storage device of claim 1, wherein the plurality ofcontact plugs include a first set of contact plugs provided in a firstconnection part to electrically connect a part of the first bit lineswith a corresponding part of the second bit lines, respectively, and asecond set of contact plugs provided in a second connection part toelectrically connect another part of the first bit lines with acorresponding another part of the second bit lines, respectively, andthe first connection part and the second connection part are separatedin the first direction.
 3. The semiconductor storage device of claim 2,further comprising: a plurality of circuit-side contact plugs, a part ofwhich connects the part of the second bit lines and one part of thesense amplifier circuits, and another part of which connects the anotherpart of the second bit lines and another part of the sense amplifiercircuits.
 4. The semiconductor storage device of claim 3, wherein thepart of the circuit-side contact plugs are not aligned along the seconddirection, and the another part of the circuit-side contact plugs arenot aligned along the second direction.
 5. The semiconductor storagedevice of claim 2, wherein the word lines includes a first part providedcorrespondingly for a first array region, a second part providedcorrespondingly for a second array region, and a third part providedcorrespondingly for a third array region, the first, second and thirdparts of the word lines being aligned along the first direction, and thefirst connection part is between the first part and the second part, andthe second connection part is between the second part and the thirdpart.
 6. The semiconductor storage device of claim 5, wherein the senseamplifier circuits are located in a first circuit region, a secondcircuit region, a third circuit region, and a fourth circuit regionarranged along the first direction, the part of the second bit lines areelectrically connected to the sense amplifier circuits located in thefirst circuit region and the second circuit region, and the another partof second bit lines are electrically connected to the sense amplifiercircuits located in the third circuit region and the fourth circuitregion.
 7. The semiconductor storage device of claim 6, wherein thefirst circuit region and the second circuit region are provided onopposite sides of the first connection part in the first direction, andthe third circuit region and the fourth circuit region are provided onopposite sides of the second connection part in the first direction. 8.The semiconductor storage device of claim 7, wherein the first circuitregion is provided under the first part of the word lines, the secondcircuit region and the third circuit region are provided under thesecond part of the word lines, and the fourth circuit region is providedunder the third part of the word lines.
 9. The semiconductor storagedevice of claim 5, wherein the plurality of contact plugs furtherinclude a third set of contact plugs provided in a third connection partto electrically connect still another part of the first bit lines with acorresponding still another part of the second bit lines, respectively,and the first connection part, the second connection part, and the thirdconnection part are separated from one another in the first direction.10. The semiconductor storage device of claim 9, wherein the word linesfurther includes a fourth part provided correspondingly for a fourtharray region, the first, second, third and fourth parts of the wordlines being aligned along the first direction, and the third connectionpart is between the third part and the fourth part.
 11. Thesemiconductor storage device of claim 10, wherein the contact plugs ofthe first set are aligned along the second direction, the contact plugsof the second set are aligned along the second direction, and thecontact plugs of the third set are aligned along the second direction.12. The semiconductor storage device of claim 11, wherein the first bitlines extend in the first direction to pass through the first part ofthe word lines, the first connection part, the second part of the wordlines, the second connection part, the third part of the word lines, thethird connection part, and the fourth part of the word lines.
 13. Thesemiconductor storage device of claim 1, wherein the contact plugs areprovided in each of N connection parts, where N is an integer largerthan 1, and the first to N-th connection parts are arranged along thefirst direction, and the word lines includes M parts providedcorrespondingly for M array regions, respectively, where M is an integerlarger than 1, and the first to M-th parts of the word lines arearranged along the first direction.
 14. The semiconductor storage deviceof claim 13, wherein the contact plugs in each of the first to N-thconnection parts are aligned along the second direction.
 15. Thesemiconductor storage device of claim 1, wherein the first bit linespartially overlap with the second bit lines, respectively, when viewedin the third direction.
 16. The semiconductor storage device of claim 1,wherein each of the sense amplifier circuits includes a low voltagecircuit and a high voltage circuit, and the second bit lines areconnected to the high voltage circuits of the sense amplifier circuits,respectively.
 17. The semiconductor storage device of claim 1, furthercomprising: a plurality of data latches, each provided on thesemiconductor substrate and under the word lines and connected to thesense amplifier circuits.